Hello! Someone suggested this "If the MOSFET is put into diode connection mode (connect the gate to the drain), you can force a small current (I recommend 1 uA–10 uA; 1 mA would probably be OK; 100 mA would result in significant power dissipation and could influence the results) and record Vds (which is equal to Vgs in this configuration).” There are just some questions i had in mind. *Is it possible to connect the gate and drain on a breadboard to put the MOSFET into diode connection mode? *How to force a small current in the drain. Is voltage divider will be enough? *Is it still possible to apply voltage source after putting it into a diode connection? Also, what is the expected measurement at the Vds terminal. If there will be no voltage source, will it be in the range of 0.1 to 1 V increase? *Why should the MOSFET be connected into a diode?

*Can a MOSFET handle low dosage for example, Cs-137 (666 keV)